Transistor 2N4401

Transistor 2N4401

General Purpose
Transistors
NPN Silicon
Features
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector - Emitter Voltage VCEO 40 Vdc
Collector - Base Voltage VCBO 60 Vdc
Emitter - Base Voltage VEBO 6.0 Vdc
Collector Current - Continuous IC 600 mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg -55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction-to-Ambient RJA 200 °C/W
Thermal Resistance, Junction-to-Case RJC 83.3 °C/W