Transistor 2N4416

Transistor 2N4416

DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4416 and 2N4416A
are silicon N-Channel Junction Field Effect Transistors
designed for VHF amplifier and mixer applications.
MAXIMUM RATINGS: (TA=25°C) SYMBOL 2N4416 2N4416A UNITS
Gate-Drain Voltage VGD 30 35 V
Gate-Source Voltage VGS 30 35 V
Drain-Source Voltage VDS 30 35 V
Gate Current IG 10 mA
Power Dissipation PD 300 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N4416 2N4416A
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
I
GSS VGS=20V, VDS=0 - 100 - 100 pA
I
GSS VGS=20V, VDS=0, TA=150°C - 100 - 100 nA
I
DSS VDS=15V, VGS=0 5.0 15 5.0 15 mA
BVGSS IG=1.0µA 30 - 35 - V
VGS(off) VDS=15V, ID=1.0nA - 6.0 2.5 6.0 V
gFS VDS=15V, VGS=0, f=1.0kHz 4,500 7,500 4,500 7,500 µS
gOS VDS=15V, VGS=0, f=1.0kHz - 50 - 50 µS
Crss VDS=15V, VGS=0, f=1.0MHz - 1.0 - 1.0 pF
Ciss VDS=15V, VGS=0, f=1.0MHz - 4.0 - 4.0 pF
Coss VDS=15V, VGS=0, f=1.0MHz - 2.0 - 2.0 pF
HIGH FREQUENCY CHARACTERISTICS: 100MHz 400MHz
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
giss VDS=15V, VGS=0 - 100 - 1,000 µS
biss VDS=15V, VGS=0 - 2,500 - 10,000 µS
goss VDS=15V, VGS=0 - 75 - 100 µS
boss VDS=15V, VGS=0 - 1,000 - 4,000 µS
gfs VDS=15V, VGS=0 - - 4,000 - µS
Gps VDS=15V, ID=5.0mA 18 - 10 - dB
NF VDS=15V, ID=5.0mA, RG=1.0kO - 2.0 - 4.0 dB