Transistor 2N4912

Transistor 2N4912

DESCRIPTION:
Transistores bipolares de junção - BJT
The CENTRAL SEMICONDUCTOR 2N4912 is a silicon
NPN power transistor manufactured by the epitaxial
base process, mounted in a hermetically sealed metal
case, designed for general purpose amplifier and
switching applications
MAXIMUM RATINGS: (TC=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 1.0 A
Continuous Base Current IB 1.0 A
Power Dissipation PD 25 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ?JC 7.0 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO VCB=80V 100 µA
I
CEV VCE=80V, VEB=1.5V 100 µA
I
CEV VCE=80V, VEB=1.5V, TC=150°C 1.0 mA
I
CEO VCE=40V 500 µA
I
EBO VEB=5.0V 1.0 mA
BVCEO IC=100µA 80 V
VCE(SAT) IC=1.0A, IB=100mA 0.6 V
VBE(SAT) IC=1.0A, IB=100mA 1.3 V
VBE(ON) VCE1.0V, IC=1.0A 1.3 V
hFE VCE=1.0V, IC=50mA 40
hFE VCE=1.0V, IC=500mA 20 100
hFE VCE=1.0V, IC=1.0A 10
hfe VCE=10V, IC=250mA, f=1.0kHz 25
f
T VCE=10V, IC=250mA, f=1.0MHz 3.0 MHz
Cob VCB=10V, IE=0, f=100kHz 100 pF