Transistor 2N5416

Transistor 2N5416

Transistores bipolares de junção - BJT PNP High Voltage
MAXIMUM RATINGS: (TA=25°C) SYMBOL 2N5415 2N5416 UNITS
Collector-Base Voltage VCBO 200 350 V
Collector-Emitter Voltage VCEO 200 300 V
Emitter-Base Voltage VEBO 4.0 6.0 V
Continuous Collector Current IC 1.0 A
Continuous Base Current IB 0.5 A
Power Dissipation PD 1.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C) 2N5415 2N5416
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
I
CBO VCB=175V - 50 - - µA
I
CBO VCB=280V - - - 50 µA
I
CEV VCE=200V, VEB=1.5V - 50 - - µA
I
CEV VCE=300V, VEB=1.5V - - - 50 µA
I
CEO VCE=150V - 50 - - µA
I
CEO VCE=250V - - - 50 µA
I
EBO VEB=4.0V - 20 - - µA
I
EBO VEB=6.0V - - - 20 µA
BVCEO IC=50mA 200 - 300 - V
BVCER IC=50mA, RBE=50O - - 350 - V
VCE(SAT) IC=50mA, IB=5.0mA - 2.5 - 2.0 V
VBE(SAT) IC=50mA, IB=5.0mA - 1.5 - 1.5 V
hFE VCE=10V, IC=50mA 30 150 30 120
hfe VCE=10V, IC=5.0mA, f=1.0kHz 25 - 25 -
f
T VCE=10V, IC=10mA, f=5.0MHz 15 - 15 - MHz
Cob VCB=10V, IE=0, f=1.0MHz - 25 - 25 pF