Transistor 2N5551

Transistor 2N5551

Bipolar (BJT) Single Transistor, NPN, 160 V, 300 MHz, 625 mW, 600 mA, 80 hFE
The 2N5551 is a 160V NPN Bipolar Transistor capable of 625mW power dissipation and 600mA collector current.
180V Collector to base voltage (VCBO)
6V Emitter to base voltage (VEBO)
83.3°C/W Thermal resistance, junction to case
200°C/W Thermal resistance, junction to ambient
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