Transistor 2N6328

Transistor 2N6328

Silicon NPN Power Transistors
Absolute maximum ratings(Ta=)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2N6326 60 VCBO Collector-base voltage
2N6327 80 v
2N6328 Open emitter 100V
2N6326 60 VCEO Collector-emitter voltage 2N6327 80
2N6328 Open base 100V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 30 A
IB Base current 7.5 A
PD Total power dissipation TC=25 200 W
Tj Junction temperature 200
Tstg Storage temperature -65~200
With TO-3 package
·Low collector saturation voltage
·High DC current gain
APPLICATIONS
·Designed for audio amplifier and
switching circuits applications