Transistor 2N7000

Transistor 2N7000

Small Signal MOSFET
200 mAmps, 60 Volts
N-Channel TO-92
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain Source Voltage VDSS 60 Vdc
Drain-Gate Voltage (RGS = 1.0 M) VDGR 60 Vdc
Gate-Source Voltage
- Continuous
- Non-repetitive (tp = 50 s)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current
- Continuous
- Pulsed
ID
IDM
200
500
mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 350
2.8
mW
mW/°C
Operating and Storage Temperature
Range
TJ, Tstg -55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction-to-Ambient RJA 357 °C/W
Maximum Lead Temperature for
Soldering Purposes, 1/16? from case
for 10 seconds
TL 300 °C