Transistor 2SB1243

Transistor 2SB1243

Features  1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2) Complements the 2SD1760 / 2SD1864. Structure Epitaxial planar type PNP silicon transistor

Absolute maximum ratings (Ta=25C) Parameter VCBO VCEO VEBO IC PC Tj Tstg −60 V V V A (DC) °C °C −50 −5 −3 1 15 1 2SB1184 2SB1243 W W (TC=25°C) W ∗1 150 −55 to 150 Symbol Limits Unit ∗1 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature